Environmentally Robust Memristor Enabled by Lead-Free Double Perovskite for High-Performance Information Storage
Xue-Feng Cheng1, Wen-Hu Qian2, Jia Wang1, Chuang Yu1, Jing-Hui He1,*（贺竞辉）, Hua Li1, Qing-Feng Xu1, Dong-Yun Chen1, Na-Jun Li1, and Jian-Mei Lu1,*（路建美）
1 College of Chemistry Chemical Engineering and Materials Science Collaborative Innovation Center of Suzhou Nano Science and Technology National United Engineering Laboratory of Functionalized Environmental Adsorption Materials Soochow University Suzhou 215123, P. R. China
2 Testing and Analysis Center Soochow University Suzhou 215123, P. R. China
Small 2019, 1905731
Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead-free double perovskite Cs2AgBiBr6 is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium-tin-oxide/Cs2AgBiBr6/Au sandwich-like memristors is retained after 1000 switching cycles, 105 s of reading, and 104 times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and 60Co γ-ray irradiation for a dosage of 5 × 105 rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs2AgBiBr6 with a high memory performance will inspire further development of robust electronics using leadfree double perovskites.
链接：https://onlinelibrary.wiley.com/doi/full/10.1002/smll.201905731
