李华教授与路建美教授合作在Chemistry – An Asian Journal 上发表研究论文
 Ternary Flexible Electro-resistive Memory Device based on Small Molecules

Qi-jian Zhang1, Jing-hui He1, Hao Zhuang1, Hua Li*1(李华), Na-jun Li1, Qing-feng Xu1, Dong-yun Chen1, Jian-mei Lu*1(路建美)

1College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, P. R. China

 

Chemistry – An Asian Journal 2016Volume 11, Issue 10Pages 1624-1630

 

Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever-growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule-based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties.

 

                                    

 

链接:http://onlinelibrary.wiley.com/doi/10.1002/asia.201600304/full