Surface engineering to achieve organic ternary memory with a high device yield and improved performance
Xiang Hou a, Xin Xiao a, Qian-Hao Zhou a, Xue-Feng Cheng a, Jing-Hui He*a（贺竞辉）, Qing-Feng Xu a, Hua Li a, Na-Jun Li a, Dong-Yun Chena and Jian-Mei Lu*a（路建美）
a College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou 215123, PR China
Chem. Sci., 2017, 8, 2344–2351
Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.
链接：http://pubs.rsc.org/en/Content/ArticleLanding/2017/SC/C6SC03986C#!divAbstract