A Photoconductive X-ray Detector with a High Figure of Merit Based on an Open-Framework Chalcogenide Semiconductor
Sijie Wu1+, Chengyu Liang2+, Jiaxu Zhang1, Zhou Wu1, Xiao-Li Wang1, Rui Zhou1, Yaxing Wang2,Shuao Wang2, Dong-Sheng Li3, and Tao Wu1*（吴涛）
1College of Chemistry, Chemical Engineering and Materials Science, Soochow University,Suzhou, Jiangsu 215123 (China)
2State Key Laboratory of Radiation Medicine and Protection School for Radiological and interdisciplinary Science (RAD-X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University,Suzhou, Jiangsu 215123 (China)
3College of Materials and Chemical Engineering, Hubei Provincial Collaborative Innovation Center for New Energy Microgrid, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, China Three Gorges University Yichang, Hubei 443002 (China)
+These authors contributed equally to this work.
Angew. Chem. Int. Ed. 2020, 59, 18605--18610
A wide range of tunability in the physical parameters of a semiconductor used for X‐ray detection is desirable to achieve targeted performance optimization. However, in a dense‐phase semiconductor, fine‐tuning one parameter often leads to unwanted changes in other parameters. Herein, the intrinsic openness in an open‐framework semiconductor has been confirmed, for the first time, to be a key structural factor that weakens the mutual exclusivity of the adjustable physical parameters owing to a non‐linear control mechanism. The controllable doping of S in a zeolitic In–Se host results in an optimal balance between resistivity, band gap, and carrier mobility, which finally results in an excellent X‐ray detector with a high figure of merit for the mobility–lifetime product (7.12×10−4 cm2 V−1); this value is superior to that of a commercial α‐Se detector. The current strategy of choosing open‐framework semiconductor materials opens a new window for targeting high‐performance X‐ray detection.