李华教授、路建美教授与新加坡南洋理工大学Qichun Zhang教授合作在 ACS Appl. Mater. Interfaces上发表研究论文

Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device

Yang Li†‡§,Zilong Wang§,Cheng Zhang,Peiyang Gu,Wangqiao Chen,Hua Li*(李华),Jianmei Lu*(路建美), andQichun Zhang*

  

College of Chemistry, Chemical Engineering and Materials Science,Soochow University,Suzhou215123,P. R. China

School of Materials Science and Engineering,Nanyang Technological University,Singapore639798,Singapore

§Yang Li and Zilong Wangcontributed equally to this work

  

ACS Appl. Mater. Interfaces,2018,10(18), 15971--15979

  

A novel thiadiazoloquinoxaline (TQ)-based donor–acceptor (D–A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQandPy-2-TQ), which show flash-type binary memory behaviors,Py-1-TQexhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (105.8:103.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D–A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D–A tuning.

  

  

链接:https://pubs.acs.org/doi/10.1021/acsami.8b05178