Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device
†College of Chemistry, Chemical Engineering and Materials Science,Soochow University,Suzhou215123,P. R. China
‡School of Materials Science and Engineering,Nanyang Technological University,Singapore639798,Singapore
§ and contributed equally to this work
ACS Appl. Mater. Interfaces,2018,10(18), 15971--15979
A novel thiadiazoloquinoxaline (TQ)-based donor–acceptor (D–A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQandPy-2-TQ), which show flash-type binary memory behaviors,Py-1-TQexhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (105.8:103.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D–A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D–A tuning.