李华教授、路建美教授与新加坡南洋理工大学Qichun Zhang教授合作在 Chem. Eur. J. 上发表研究论文

Nonvolatile Tri-State Resistive Memory Behavior of a Stable Pyrene-Fused N-Heteroacene with Ten Linearly-Annulated Rings

Yang Li[a, b], Cheng Zhang[a], Peiyang Gu[b], Zilong Wang[b],Zhengqiang Li[a], Hua Li*[a](李华),Jianmei Lu*[a](路建美), and Qichun Zhang*[b]

  

[a] College of Chemistry, Chemical Engineering and Materials ScienceSoochow University, Suzhou 215123 (P. R. China)

[b] School of Materials Science and EngineeringNanyang Technological UniversitySingapore 639798 (Singapore)

  

Chem. Eur. J. 2018, 24, 7845--7851

The diverse functionalities of large Nheteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrenecontaining Nheteroacene with ten linearlyannulated rings in one row. Remarkably, it exhibited excellent tristate resistive memory property, which held great promise to achieve ultrahighdensity data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large Nheteroacene (n≥10), which provides guidelines for designing more proofofconcept larger Nheteroacenebased memory electronics.

  

链接:https://onlinelibrary.wiley.com/doi/abs/10.1002/chem.201801146