Nonvolatile Tri-State Resistive Memory Behavior of a Stable Pyrene-Fused N-Heteroacene with Ten Linearly-Annulated Rings
Yang Li[a, b], Cheng Zhang[a], Peiyang Gu[b], Zilong Wang[b],Zhengqiang Li[a], Hua Li*[a]（李华）,Jianmei Lu*[a]（路建美）, and Qichun Zhang*[b]
[a] College of Chemistry, Chemical Engineering and Materials Science，Soochow University, Suzhou 215123 (P. R. China)
[b] School of Materials Science and Engineering，Nanyang Technological University，Singapore 639798 (Singapore)
Chem. Eur. J. 2018, 24, 7845--7851
The diverse functionalities of large N‐heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene‐containing N‐heteroacene with ten linearly‐annulated rings in one row. Remarkably, it exhibited excellent tri‐state resistive memory property, which held great promise to achieve ultrahigh‐density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N‐heteroacene (n≥10), which provides guidelines for designing more proof‐of‐concept larger N‐heteroacene‐based memory electronics.